ORIGINAL COMPONENT

BSS123-G

onsemi · 100 V n-channel MOSFET · SOT-23

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Original component and up to three alternatives
Specification	OriginalBSS123-Gonsemi	Alternative 1BSS123Nexperia	Alternative 2No verified match	Alternative 3No verified match
Supplier links	Search Mouser View on DigiKey Search LCSC	Search Mouser Search DigiKey Search LCSC	—	—
Review	Original part	Needs engineering review	—	—
Package	SOT-23	SOT-23	—	—
Channel	N-channel	N-channel	—	—
Drain-source voltage	100 V	100 V	—	—
Gate-source absolute limit	±20 V	±20 V	—	—
Drain current	170 mA at TA = 25 °C; minimum pad	150 mA at TA = 25 °C	—	—
On-resistance (max)	6 Ω at VGS = 10 V, ID = 170 mA	6 Ω at VGS = 10 V, ID = 120 mA	—	—
Pinout	1 gate · 2 source · 3 drain	1 gate · 2 source · 3 drain	—	—
Details	Datasheets BSS123 datasheetRev. 12, Oct 2025 · 1–3; package outline	Differences & datasheets Current ratings and resistance test currents differ. The onsemi orderable part is BSS123-G; the suffix is preserved. Do not infer logic-level suitability from threshold voltage. Use a guaranteed on-resistance at the actual gate drive. Respect the candidate's lower limits where applicable and verify SOA, body diode, switching loss, and PCB thermal design. Gate charge, avalanche rating, switching timing, complete temperature curves, and assembly tolerances are not fully matched. BSS123 datasheetRev. 1.000, Aug 2000 · 2–4	—	—

Original datasheet

BSS123 datasheetRev. 12, Oct 2025 · 1–3; package outline

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